| 摘要 |
PURPOSE:To improve the function of a barrier layer by opening an electrode window, then continuously forming a polycrystalline silicon film, an aluminum film, a titanium nitride, zirconium nitride or hafnium nitride film, patterning it to form electrodes and wirings, forming a protective film thereon, and heat treating it. CONSTITUTION:After an element is formed on a substrate 1, an electrode window is opened in an SiO2 film 2 to form a hole 3, a polycrystalline silicide film 4 is formed as a contacting layer in the hole 3, and a film 5 of aluminum or the like, a titanium nitride film, zirconium nitride film, or hafnium nitride film 6a are formed. After an etching resist mask 7 is formed, a protecting film 8 is formed, it is heat treated to form an aluminum film 9.
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