| 摘要 |
PURPOSE:To bond without solvent nor stress by forming the layer of thermoplastic substance film on two Si wafers, and pressurizing and heating the layers in the laminated state. CONSTITUTION:SiO2 films 12, 22 of 0.5mum thick are deposited as an impurity diffusion preventing substance layer on Si wafers 11, 21, and PSG films 13, 23 are similarly deposited in thickness of 2.5mum thereon by an ambient pressure CVD. Thus formed bonding substrates 14, 24 are superposed so that the layers 13, 23 are contacted with each other on two quartz supporting bases 15, filled in an electric furnace 17 in the state placed on a columnar quartz block 16, and bonded by pressurizing and heating. When PSG of 14mol% of P2O5 density is used, the two substrates 14, 24 are completely fusion-bonded by pressurizing with 26g/cm<2> and heating at 950 deg.C with the block 16. When the bonded substrates 14, 24 where pulverized and finely examined, separation of the substrates due to unbonding was not observed.
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