| 摘要 |
PURPOSE:To effectively utilize a chip substrate by burying a wiring layer in a thick field insulating film. CONSTITUTION:A photoresist mask 9 is formed on a substrate 1, and the field region of a substrate is etched to form a groove. The mask 9 is removed, a thin thermal oxide film is, for example, formed as the first insulating film 21 to form a wiring layer 3 buried in the field region. Thereafter, the second insulating film 22 is deposited by a CVD method, the second insulating film 22 remains only on the field region by a flattening technique to form a structure that the wiring layer 3 is buried therein. Thereafter, a desired element is formed on the element region of the substrate according to a normal element forming step, and necessary wirings are formed to complete an integrated circuit.
|
