| 摘要 |
PURPOSE:To facilitate improvement in light emission efficiency and reduction in transmission loss of an LED for optical communications by forming an active region which has a center wavelength of light emission in a specific range in an InGaP epitaxial layer. CONSTITUTION:An included GaAsP layer 12 and a GaAs layer 13 are made to grow on an N-type GaAs substrate 11. Further, an N-type InGaP layer 14 is made to grow on the layer 13 and a P-type impurity such as zinc is diffused from the surface of the layer 14 to form a P-type InGaP layer 15. Then electrodes 16 and 16' are formed on the surface of the layer 15 and the back plane of the substrate 11 respectively. This P-N junction constitutes an active region which has a center wavelength of light emission in a range of 0.56-0.59mum. As InGaP is of direct transition type, a high light emission luminance can be obtained. The epitaxial layer may be formed by vapor phase deposition or bulk deposition. With this constitution, an LED with a high luminance and low transmission loss can be obtained. |
