| 摘要 |
PURPOSE:To control the region and form of plasma and to obtain a good film forming condition by impressing a voltage to a nozzle disposed in a film forming gas flow passage and forming an electric field between the nozzle and a plasma generator by the microwaves on the upper stream side thereof. CONSTITUTION:This film forming device is constituted by connecting a plasma chamber 4 disposed with the plasma generator 2 provided with a cavity resonator 6 having a waveguide 8 and microwave introducing window 7 and having an opening 9 and a film forming chamber 5 disposed with a substrate 12 by the nozzle 1 of a reducing and expanding type. A non-film forming gas is supplied into the cavity resonator 6 of the above-mentioned device and at the same time the microwaves are introduced therein to generate the plasma which is delivered from the opening 9. The plasma is supplied together with the film forming gas from a supply ring 10 via the nozzle 1 into the film forming chamber 5. The voltage is at the same time impressed from a power source 3 to the above-mentioned nozzle 1 to form the electric field between the plasma generator 2 on the upper stream side thereof and the nozzle 1. The plasma is thereby effectively converged and the good film formation is executed.
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