| 摘要 |
PURPOSE:To reduce remarkably probability of occurrence of a soft error, especially, of a bit line mode by adding newly a transistor for precharging in a cell array. CONSTITUTION:Transistors TR13-TRn3 for precharging are added near the middle according to the resistance of a bit line as a countermeasure against soft error of bit line mode. That is, to remove the influence of alpha-ray made incident to a bit contact part before precharge pulse turns off, a line consisting of transistors for precharging is added in a cell array A to divide the bit line or lower resistance apparently. Thereby, probability of occurrence of a soft error of the bit line mode goes to small.
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