| 摘要 |
PURPOSE:To obtain a device which provides excellent performance by a method wherein an etching stopper layer and a base contact layer are provided in lamination on a base layer and selective etching is carried out at the part where an emitter or a collector is to be formed and automatically discontinued at the stopper layer and the emitter or the collector is formed on the exposed stopped layer. CONSTITUTION:An N<+> type GaAs collector layer 2, an I-type AlGaAs collector side potential barrier layer 3, an N<+> type GaAs base layer 4, an N<+> type AlGaAs etching stopper layer 5 and an N<+> type GaAs base contact layer 6 is made to grow in lamination by epitaxial growth. Then the surface is covered with an SiO2 film 7 which has an aperture corresponding to an emitter forming region and a recessed part 5A which eaches the surface of the layer 5 is drilled by etching with CCl2F2 gas in the layer 6. Then an I-type AlGaAs barrier layer 8 and an N<+> type GaAs emitter layer 9 and formed in the recessed part 5 and the film 7 is removed and base electrodes 11 are attached to the exposed contact layers 6. |
