| 摘要 |
PURPOSE:To grow a uniform film effectively by providing a gas cooling device between a material gas supply hole and a pedestal for supporting a substrate. CONSTITUTION:A gas cooling device 7 is arranged between a material gas supply hole 1 and a pedestal 5 for supporting a substrate 4. The material gas is mixed into a carrier gas and is led from a supply hole 1 to a reaction chamber 3, and further to the substrate 4 through the device 7. Then, the material gas is decomposed there and the crystal of a compound semiconductor is deposited on the substrate 4 by the chemical reaction among the decomposition products. Accordingly, also when the substrate 4 is heated to high temperature, the temperature of gas phase of the upstream of the substrate 4 does not increase and the transported material gas is decomposed only on the substrate 4 or in the vicinity of the substrate 4. The temperature distribution in the vicinity of the substrate 4 becomes uniform and the uniform film can be grown effectively.
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