| 摘要 |
PURPOSE:To prevent silicide reaction between a metal oxide film such as a Ta2O5 film used in a capacitor part and a silicon substrate, to prevent reaction between the metal oxide such as Ta2O5 film and a polycrystalline silicon electrode located on the metal oxide film such as the Ta2O5 film, to reduce leaking currents and to prevent reduction in capacitance due to heat treatment, by providing a silicon nitride film. CONSTITUTION:A silicon nitride film 102 formed on the surface of a silicon substrate 101 is used to prevent silicide reaction between a Ta2O5 film and the silicon substrate when the Ta2O5 film is formed in the succeeding process. The diffusion coefficient of oxygen in the silicon substrate 101 is not oxidized through said Ta2O5, and the capacitance is not reduced. A silicon nitride film 104, which is formed on high dielectric-constant material, is formed by, e.g., a pressure reduced CVD method. Then, the silicon nitride film is thermally oxidized and a thin silicon oxide film 105 is formed. The best advantage of this oxidation is the fact that the basis film is grown by the oxidation of the surface of the silicon substrate 101 through pinholes in the Ta2O5 film 103 and the silicon nitride film 102.
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