| 摘要 |
PURPOSE:To prevent yield of cracks in a capacitor forming insulating film, by burying a conducting film 12 in a part between a gate electrode and an element isolating SiO2 film so as to flattening the part, and forming the capacitor forming insulating film 8 thereon. CONSTITUTION:A conductive film 12 is formed beforehand so as to bury a part between an element forming electrode 6 and an element isolating oxide film 1. The part between the element forming electrode and the element isolating oxide film 1 is flattened. A capacitor forming insulating film 8 is formed on said conducting insulating film 12. For example, the element isolating SiO2 film 1 is formed on the P-type Si substrate 2. A source region 3 and a drain region 4 are formed on an element forming region. A gate oxide film 5 is formed on the substrate 2. The gate electrode 6 is formed thereon. A wiring film 11 is formed on the element isolating SiO2 film 1. The conducting film 12 comprising tungsten or polysilicon is formed and flattened on the drain region 4. The capacitor forming insulating film 8 and a metal film 9, which is to become the electrode in the capacitor, are formed on the film 12. |
