| 摘要 |
<p>PURPOSE:To obtain a ZnSe or ZnSxS1-x single crystal film having a low-donor concentration and a high resistance by a method wherein a raw material is supplied in such a way that the supply ratio of the number of the atoms of Se or the sum of Se and S to Zn becomes a specific value. CONSTITUTION:In a reaction system in an organic metal thermal decomposition method, the supply ratio of the number of the atoms of selenium (Se) or the sum of Se and sulfur (S) to a raw material, zinc (Zn), is set at 0.3-0.7. In case ZnSe is grown in the above condition, a high-resistance ZnSe single crystal film, whose donor concentration is significantly decreased as compared with other supply ratio in the vicinity of the raw material supply ratio of 0.5, is obtained. Even in case the substrate temperature is heated to 200 deg.C-400 deg.C in a pressure of 10Torr or less in a reaction tube and the SnSe is grown, the ZnSe single crystal film having a low donor concentration and a high resistance can be obtained in the range of the raw material supply ratio of 0.3-0.7.</p> |
