| 摘要 |
PURPOSE:To produce a semiconductor with resist corner shape finished sharply and evenly by a method wherein a wafer coated with resist is successively heated to be irradiated with ultraviolet rays later. CONSTITUTION:When a wafer W is carried to a hot plate 10, an electromagnetic valve 15a is opened to start a vacuum pump 15. When a vacuum vessel 4 reaches the specified degree of vacuum thereby, another electromagnetic valve 16b is opened to feed the vacuum chamber 4 with nitrogen gas. Later the plate 10 lowered down to a cold plate 11 is lifted up to the middle step position by actuating a cylinder 9. On the middle step position, the hot plate 10 is preheated by a heating coil 10a. Later the hot plate 10 is lifted up to the upper step position where a shutter 19a is driven by a motor 19 to be opened for irradiating the wafer W with UV rays 5a. Further, the hot plate 10 is heated up to higher temperature by the heating coil 10a. When the resist coated on the wafer W is hardened,the hot plate 10 is lowered down to the original position to take the wafer 10 outside. |
