发明名称 SEMICONDUCTOR LASER BEAM GENERATING EQUIPMENT
摘要 PURPOSE:To prevent the deviation between a laser beam and a mirror cylinder, and make it possible to adjust precisely an optical axis deviation, by supporting a light source part and a mirror cylinder part by the same supporting part made of invar, surrounding the supporting part of a semiconductor laser of light source with heat-insulating material, and holding the light source part from outside by a screw. CONSTITUTION:A semiconductor element 11 is adjusted in its temperature by a Peltier element 14 via a supporting part 12 made of copper. The supporting part 12 is surrounded with heat- insulating material, and its temperature adjusting efficiency is excellent. The radiation side of the Peltier element 14 is coupled with a radiation fin 18 via an element-fixing plate 15 of copper and thermal conduction parts 16 and 17, and its temperature adjusting efficiency is excellent. Accordingly, the spread beam from the laser element 11 is transmitted toward mirror cylinders 21 and 23 with a desired diameter and direction. As to beam shaping, the mirror cylinder 21 is rotated against a supporting part 19, and shifted in the direction of optical axis to realize a desired beam B. The light source parts 11-14 and the mirror surface parts 21-25 are held by a supporting part 19 of invar, and the mirror cylinders 21 and 23 are also made of invar. A light source part is kept in a constant temperature, so that the deviation caused by temperature does not occure between the laser element and the mirror cylinder. Optical axis deviation is adjusted by the screw 20 of the supporting part 19.
申请公布号 JPS62117382(A) 申请公布日期 1987.05.28
申请号 JP19850257967 申请日期 1985.11.18
申请人 OMRON TATEISI ELECTRONICS CO 发明人 KITAJIMA HIROSHI;YOSHIDA TOMIYOSHI;MORISHITA KOJI;NAKATSUKA NOBUO
分类号 H01S5/00;H01S5/06 主分类号 H01S5/00
代理机构 代理人
主权项
地址