| 摘要 |
PURPOSE:To reduce a cell capacity, and to reduce the consumption of power by adding a circuit so that the output of an unselected string decoder becomes L with the output H of a selected decoder to the string decoder of a two-ports semiconductor memory device, and using the string decoder as a presetting decoder. CONSTITUTION:A block is constituted with four CMOS inverter circuits, a four-inputs NAND circuit, and a clamping circuit, and a decoder which selects one among 4N pieces by N blocks is constituted. Also,the clamping circuit 10 is constituted so that, when either one input terminal among input terminals Y0-Y3 is H, the potentials of the remainder three input terminals become zeros entirely. Since the output of the row decoder becomes always zero when unselected, it is used as the presetting decoder as well.
|
