发明名称 SELECTIVE SURFACE TREATMENT
摘要 PURPOSE:To selectively suppress surface chemical reaction in a light irradiated part of a substrate by adsorbing a reaction seed by the chemical reaction of gas on the surface of the substrate and irradiating light thereto so that the adsorbed reaction seed is selectively desorbed from the desired part. CONSTITUTION:The substrate 7 installed in a reaction cell 6 is maintained at a prescribed temp.; further a suitable atmosphere of the gas introduced through a valve 10 from a gas supply source 9 is maintained in the cell 6. The reaction seed of the surface chemical reaction is thereby adsorbed onto the substrate 7 surface. The exit light from a laser 1 which oscillates at a suitable wavelength is passed through a window 5 provided to the cell 6 by a reflection mirror 2 and a lens 4 and is irradiated onto the substrate 7. The image of a mask 3 having a desired irradiation pattern is formed on the surface of the substrate 7 by a lens 4 in order to make selective irradiation. The reaction seed adsorbed on the substrate is selectively eliminated from the substrate by the irradiation of the light in the above-mentioned manner, by which the thin film pattern of a desired negative type is formed with high accuracy.
申请公布号 JPS62116786(A) 申请公布日期 1987.05.28
申请号 JP19850254582 申请日期 1985.11.13
申请人 NEC CORP 发明人 KISHIDA SHUNJI
分类号 C23C16/04;C23F4/00;H01L21/3205 主分类号 C23C16/04
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