| 摘要 |
PURPOSE:To reduce the variation in rising and enhance precision by controlling an ion implantation device on the basis of the optimum control value and producing beam waveform data from the beam current obtained from a measuring device in order to optimize the beam current waveform during rising. CONSTITUTION:The ion implantation system of this invention includes a memory which stores a control value corresponding to a variable set value for each work condition, a measuring device 32 which measures the control value and the beam current of a target, an arithmetic unit 35 and an ion implantation device. The arithmetic unit 35 obtains the optimum control value during operation of the ion implantation device through the measuring device 32, the optimum control value for the work condition is stored in the memory and the optimum control value for a work condition similar to the work condition during the rise of the ion implantation device is read from the memory. The ion implantation device is controlled according to the optimum control value, beam waveform data are produced from the beam current obtained from the measuring device 32 and the ion implantation device is risen in such a manner that the beam waveform becomes optimum. Thus, fine adjustment from a value approximating the optimum value to the optimum value is facilitated.
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