| 摘要 |
PURPOSE:To obtain a Cu wire for semiconductor device bonding remarkably improved in joining reliability by blending specific amounts of Ti and 1 or >=2 elements among Mg, Fe, Ni, Cr, Si, Co, Mn, Al and B with Cu. CONSTITUTION:The Cu wire for semiconductor device bonding has a composition consisting of, by weight, 0.00005-0.2% Ti, 0.0002-0.2% of 1 or >=2 elements among Mg, Fe, Ni, Cr, Si, Co, Mn, Al and B, and the balance Cu, in which the purity of Cu as the balance is regulated to 99.99wt% or above, or the one further containing <0.2% of 1 or >=2 kinds among Zn, Sn, Ca, Be, Y and rare earth elements and the balance Cu. |
