| 摘要 |
PURPOSE:To reduce a signal delay and to uniformly operate even if thin film transistors are arranged in an array state by providing first and second, third electrodes on an insulating layer and a semiconductor on the first transparent substrate to form a superposing region, and decreasing the thicknesses of the second, third electrode films than that of the film of nonsuperposing region. CONSTITUTION:A transparent substrate 11 uses a glass, a first electrode 14 made of an NiCr film is formed, and SiNx film of an insulating layer 13, and an a-Si film of a semiconductor layer 12 are continuously deposited. Then, a positive type photosensitive resin 31 is applied, ultraviolet ray l is emitted from the substrate side, overexposed, to form the unexposed part 31a of the resin 31 slightly narrower than the electrode 14. A photosensitizer pattern 31b opposing the electrode 14 is formed by developing. After an MoSi2 film 32 is deposited, a thin electrode 33 of film including the superposing region 17 of the second, third electrodes to become source and drain electrodes is formed. Thereafter, an Al film 34 is deposited, an aluminum film of the gate electrode is etched to form second and third electrodes 35, 36. |
