| 摘要 |
PURPOSE:To obtain a high output, by integrating a plurality of lasers in two dimensions for providing a multistripe laser. CONSTITUTION:A double hetero P-N junction is composed of a P-type GaAs substrate 1, an N-type GaAs layer 2, a P-type GaAlAs layer 3, as GaAlAs active layer 4 and an N-type GaAlAs layer 5. A contact layer is provided by an N-type GaAs layer 6. Injected current flows only through grooves 19 which are formed in the N-type GaAs layer 2 by etching the same, and laser oscillation is thereby caused in the GaAlAs active layer 4 directly over the grooves 19. In this case, an AuZu electrode 17 serves as a P electrode while an AuGeNi electrode 18 serves as an N electrode. A non-doped GaAs or GaAlAs layer 7 having a high resistance electrically isolates the upper semiconductor lasers from the lower lasers. The upper semiconductor lasers 8 to 13 are identical with the lower semiconductor laser 1 to 6. In this case, an AuZu electrode 16 serves as a P electrode while an AuGeNi electrode 14 serves as an N electrode. |
