| 摘要 |
PURPOSE:To prevent the displacement of an aluminum wiring due to the stress of a sealing medium at a time when sealing a semiconductor chip, and to obviate an aluminum slide by flattening the whole surface of a surface protective film for the semiconductor chip coating the aluminum wiring. CONSTITUTION:An underlay insulating film 2 consisting of an silicon oxide film, etc. is formed onto the main surface of an silicon substrate 1 through a thermal oxidation method, a CVD method, a sputtering method, etc., and aluminum wirings 3 are shaped onto the underlayer insulating film 2 through the sputtering method, the CVD method, etc. A surface protective film 4 coating the aluminum wirings 3 and a semiconductor chip are formed through the CVD method, the sputtering method, etc. A surface protective film 5 for flattening the surface protective film 4 is shaped so as to fill recessed sections in the surface protective film 4 through the CVD method, the sputtering method, an etching-back method, a spin coating method, etc. Accordingly, the stress of a sealing medium does not work to projecting sections in the surface projective film 4. |
