| 摘要 |
PURPOSE:To obtain a diode having favorable Zener characteristics by providing an anode region by means of diffusion of a low-concentration impurity, and to improve the degree of integration of a monolithic integrated circuit by providing a favorable Zener diode within a separating region. CONSTITUTION:A monolithic integrated circuit comprises a P-type semiconductor substrate 11, an N-type epitaxial layer 12 on the substrate 11 and a P<+> type separating region 14 provided so as to extend across the layer 12 to separate the layer 12 into a plurality of island regions 13 and 13. the integrated circuit further comprises a P-type anode region 15 formed by diffusing a low concentration of impurity from the surface of the separating region 14, an N<+> type cathode region 16 formed by diffusing an impurity in the surface region of the anode region 15, and anode and cathode electrodes 17 and 18 ohmically contacted with the regions 15 and 16, respectively. According to such construction, any crystal defects produced on the surface of the separating region 14 will be annealed and decreased by the diffusion of the low-concentration impurity of the anode region 15. Thus, favarable Zener characteristics can be obtained. |
