| 摘要 |
<p>1. Process for the formation of thin films of uniform thickness and composition on numerous planar substrates (23) by chemical deposition from a reactive gaseous mixture, comprising the treatment of said substrates in a reactive space between a tight, rotatable, horizontally axed, cylindrical enclosure (1), whose outer wall (5) is heated and whose prismatic inner wall (31) carries substrates and a generally cylindrical, fixed, cooled internal gas injector-ejector (14, 31), so that each substrate positioned on the inner wall has an equivalent position during deposition with respect to the entry and exit of the gases with respect to the reactive space, the total pressure in the reactive space being at the most equal to atmospheric pressure and the temperature of the coated substrates being kept constant during the treatment by regulating the temperature of the outer wall.</p> |
