Integrated CMOS circuit and method of producing the circuit

摘要

An integrated CMOS circuit has at least one trench filled with insulating material in a principal face of a substrate composed of monocrystalline silicon. A p-type zone extends down into the substrate to a depth greater than the depth of the trench along one side wall of the trench from the principal face. In addition, an n-type zone extends down into the substrate to a depth greater than the depth of the trench along the other side of the trench from the principal face and makes contact with the p-type zone underneath the floor of the trench. A separate MOS transistor is formed in each of the zones.