| 摘要 |
PURPOSE:To increase the effect of a capacity, by a construction wherein a capacity of P-N junction is provided between an N-type region and a substrate electrode, in parallel with a capacity between an electrode and the N-type region, so that the capacity of P-N junction between the N-type region and a P-type region of high concentration is made to be the capacity of P-N junction. CONSTITUTION:A P-type region 102 is formed in a non-active region on the surface of a P-type silicon single crystal substrate 101, for instance, and a silicon oxide film 103 is made to grow therein. A silicon oxide film 104 is formed in an active region. A part of the active region is covered with a photoresist 105 which serves as a mask. Next, ions are implanted to form a P-type region 106 and an N-type region 107 on the surface of the substrate, and also an electrode 108 of a capacity element and a gate electrode 109 of MIST on the upper surface of the silicon oxide film 104. An N-type region 110 and an N-type region 111 serving as a digit line are formed on the surface of the substrate. The N-type region 110 is connected to the N-type region 107 in the output region of MIST. The N-type region 111 is the other output region of MIST. Thereafter an interlayer insulating film 112 is formed on the surface of the substrate. In addition, an electrode wiring 113 is led out, and a substrate electrode 114 giving a substrate bias is connected conductively thereto. |
