| 摘要 |
PURPOSE:To obtain a highly reliable circuit that detects specified voltage stably irrespective of manufacturing process by controlling the state of connection of plural resistances by the state of conduction of transfer gates to obtain specified detection voltage. CONSTITUTION:Detection signals for supplying the main part of an LSI are led out from an output end of a CMOS inverter consisting of transistors P11, N11. The CMOS inverter is connected between a power source VDD and ground, and a transistor P12 and plural resistances R are connected to an input end A, and transfer gate 1-8 having a grounded end are connected respectively to connecting points between resistances R. An optimum resistance value is stored in a nonvolatile memory 12 for each chip to enable each semiconductor chip to output specified voltage detection signals. Read data from the memory 12 are inputted to a decoder 9 through a multiplexer circuit 10 to make a desired transfer gate conduct. An optimum resistance is selected and connected to the input end A, and a detection signal that detected specified voltage level is outputted from the inverter.
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