| 摘要 |
PURPOSE:To obtain an electrophotographic sensitive body having superior photoconductive characteristics and environmental resistance by using N-type a-Si as at least part of an electrophotographic sensitive body. CONSTITUTION:A charge generating layer 23 is formed on an electrically conductive support 21 with a charge transferring layer 22 in-between. The charge generating layer 23 is made of N-type amorphous silicon contg. H and has 1-10mum thickness. The charge transferring layer 22 is made of microcrystalline silicon contg. H and at least one among C, O and N and has 3-80mum thickness. Thus, an electrophotographic sensitive body having high resistivity, superior electrostatic charge characteristics, high sensitivity in the visible light and near infrared light regions and high practicality can easily be produced. |
