Planar process and structure for spectral filters in an optoelectronic device.

摘要

Bandpass or band reject spectral filters (11) for a monolithic optoelectronic device are produced by a planar process compatible with the semiconductor process utilized to produce the optoelectronic device. The filter (11) is comprised of a number of layers (14-20) of material normally used in a semiconductor process. The thickness of layers applied over an imaging is modulated (6,8,10) to create the interference filters with necessary characteristics. In an MOS-type process, a given pixel area consists of a set of layers of silicon oxide, polysilicon and silicon nitride with specific thickness dimensions.