| 摘要 |
PURPOSE:To readily integrated OEIC by forming a reverse mesa groove which extends toward the interior from the surface in sectional shape on a substrate, burying a semiconductor layer having high impurity density in the substance in the groove, and growing a crystal on the layer to complete the current narrowing of a laser. CONSTITUTION:With an SiO2 layer opened in a stripe shape by a photoprocess as a mask a reverse mesa groove 2 is formed by etching on an ion-doped SI-InP substrate 1. Then, N<+> type InP layer 3 of 2-3X10<18>cm<-3> of carrier density is buried by a CVD method. The SiO2 layer on the substrate is removed, and an InGaAsP layer 4 of active layer, a P-type InP layer 5 of P-type clad layer and an N-type InP layer 6 of N-type clad layer are sequentially grown. Then, HR-InP layer 8 are grown at both sides of a laser active unit, P<+> type diffused regions 7, electrode 8 are formed, unnecessary portion of a grown layer is mesa etched to be removed. Thus, the depth of the groove 2 is increased, the back surface of the substrate is polished to exposed the buried N<+> type InP layer 3, and an N-type side electrode is formed. Thus, a structure with complete current narrowing is obtained.
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