| 摘要 |
PURPOSE:To prevent the deterioration of the quality of an insulating film by a method wherein the surface of a first conductor layer formed by dry etching is etched thinly by a wet etching method. CONSTITUTION:An insulating film 2 is formed on the surface of a semiconductor substrate 1, a polycrystalline silicon film is formed by using a chemical vapor- phase growth method, and then the polycrystalline silicon film is turned into a conductor film by doping. Thereafter the polycrystalline silicon film is etched to be in a desired shape by using a photoengraving method and a dry etching method, and thus a first conductor film 3 used as a wiring or an electrode is obtained. At this time, microscopic surface roughness and warp 4 exist on the surface of the lateral wall of the polycrystalline silicon film. In addition, a corner portion 5 has an angular shape. When the polycrystalline silicon film is etched then by using a wet etching liquid, the microscopic warp and surface roughness existing on the surface of the lateral wall of the polycrystalline silicon film are removed, and also the edge of the corner portion 5 is removed with the shape rounded. When this method applies to a nonvolatile memory and a dynamic RAM, the memory characteristic thereof is improved sharply and the reliability there of is increased.
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