| 摘要 |
PURPOSE:To prevent damage of ion implantation onto the shadow section even when forming a surface mask of a wafer by making the wafer position variable under such condition as the ion beam injection angle against the wafer is maintained at a preset level. CONSTITUTION:In an ion implanting apparatus where ions are implanted in a wafer while inclining by predetermined implantation angle against the implanting direction of ions, the position of the wafer is made variable while maintaining a predetermined implanting angle. A rotary shaft 7 is set to a platen 2, for example, then rotated to rotate the platen 2. Consequently, even such portions as never implanted with ions conventionally can be implanted while maintaining the implantation angle theta (there are signals of plus and minus).
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