| 摘要 |
PURPOSE:To sufficiently apply charged beam lithography even if the area of a repetition pattern is large by providing an aperture for forming a repetition pattern and an aperture for varying a beam size in a mask, and selecting one of the apertures in response to the repetition pattern or a nonrepetition pattern, thereby improving a drawing throughput. CONSTITUTION:Apertures 21a, 21b of the first aperture mask 21 are rectangular so that the aperture 21b is smaller than the aperture 21a. An aperture 22a of the second aperture mask 22 is corresponds to a repetition pattern of a memory cell to be exposed. When the pattern of the memory cell to be exposed is, for example, the repetition of a shaped portion, the aperture 22a corresponds to both hatched portions.
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