| 摘要 |
PURPOSE:To perform the position of an active layer with good reproducibility so that the time when the active layer is exposed with high temperature is very short by forming a groove etched deeper than the side of the narrow end of the second conductivity type AlGaAs layer on the first conductivity type GaAs substrate by melt etching the first conductivity type GaAs substrate. CONSTITUTION:A groove deeper at the side than the narrow end 13 of a second conductivity type AlGaAs block layer 2 is formed by melt etching on a first conductivity type GaAs substrate 1, the first conductivity type GaAs active layer 1 is formed thereon by forming the first conductivity type clad layer 4 by utilizing the fact that the crystal gown is stopped by the shape effect of the groove, and the layer 1 is formed thereon. Thus, even if the shape of the V-shaped groove is varied, a first conductivity type GaAs active layer 5 is formed with good reproducibility in the boundary between the substrate 1 and the layer 2 so that the narrow current becomes optimum. The time that the layer 1 is exposed with the high temperature is remarkably shortened to significantly reduce the influence of the heat applied to the active layer.
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