发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PURPOSE:To prevent a surface protecting film from cracking by digging a recess corresponding to a wiring region on an interlayer insulating film of lower layer, and burying a metal wiring layer in the recess. CONSTITUTION:With a mask for forming metal wirings or a mask oversized or undersized from the previous mask a recess 5a is dug on a metal wiring forming portion of an interlayer insulating film 5, and an outer peripheral metal wiring layer 3 is formed in the recess 5a. Accordingly, to form the layer 3 in the recess 5a dug on the film 5 of a lower layer, the step of the layer 3 is eliminated on the film 5, the surface of a surface protecting film 4 is resultantly flattened to alleviate the concentration of a stress applied to the film 4 due to a thermal expansion, Thereby suppressing the generation of a crack of the film 4.
申请公布号 JPS62114243(A) 申请公布日期 1987.05.26
申请号 JP19850257080 申请日期 1985.11.13
申请人 MITSUBISHI ELECTRIC CORP 发明人 MIYAJIMA HIROSHI;NAKAJIMA TOYOKATSU
分类号 H01L21/768;H01L21/31;H01L23/522 主分类号 H01L21/768
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