发明名称 Photovoltaic device
摘要 A photovoltaic device comprises a plurality of photoelectric converting regions formed on an insulating surface of a light transmissive substrate. Each photoelectric converting region includes a transparent film electrode, an amorphous semiconductor portion having a PIN junction parallel to the film surface and a back film electrode connected to the transparent film electrode of an adjacent region of the insulating surface. On a portion of the transparent film electrode, there is formed an insulating adiabatic layer. The adiabatic layer is formed at a position where an energy beam to be irradiated in the production process. Accordingly, when the energy beam is irradiated and the back electrode film is divided corresponding to each photoelectric converting region, thermal damage to the transparent film electrode due to the energy beam is prevented by the insulating adiabatic layer.
申请公布号 US4668840(A) 申请公布日期 1987.05.26
申请号 US19850749888 申请日期 1985.06.27
申请人 SANYO ELECTRIC CO., LTD. 发明人 KIYAMA, SEIICHI;KIHARA, HITOSHI;IMAI, HIDEKI
分类号 H01L27/142;H01L31/20;(IPC1-7):H01L27/14 主分类号 H01L27/142
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