发明名称 |
Semiconductor device passivated with phosphosilicate glass over silicon nitride |
摘要 |
The semiconductor device includes a layer of silicon nitride (Si3N4) beneath a phosphosilicate glass (PSG) layer. A silicon nitride impervious layer prevents the oxidation of underlying, exposed silicon regions during a "flow" step and any "reflow" step. Accordingly, the flow of the PSG layer can be conducted in an atmosphere containing steam, which means that the PSG layer can contain less than about 7% phosphorus by weight. The reduction of the phosphorus content of the PSG layer provides increased reliability for the semiconductor device. The method of manufacturing such a device is also disclosed. |
申请公布号 |
US4668973(A) |
申请公布日期 |
1987.05.26 |
申请号 |
US19800221367 |
申请日期 |
1980.12.30 |
申请人 |
RCA CORPORATION |
发明人 |
DAWSON, ROBERT H.;SCHNABLE, GEORGE L. |
分类号 |
H01L21/3105;H01L21/316;H01L23/29;H01L23/31;H01L23/532;(IPC1-7):H01L29/78;H01L21/94 |
主分类号 |
H01L21/3105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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