发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To obtain flatly buried electrode or wirings which are not sunk by forming a hard anodic oxidation film on a soft aluminum film to relatively increase a resistance against polishing as compared with a projection in the recess of the aluminum film. CONSTITUTION:The steps to the formation of an aluminum film 4 is the same as those of a conventional example. Then, an anodic oxidation film 5 is formed by an anodic oxidation on the film 4. When polishing is proceeded, the film 5 of a projection A is removed by polishing, the aluminum is exposed to allow the film 5 to remain on a recess B. The aluminum on the projection A is abruptly reduced in the state that the polishing is proceeded, and becomes substantially the same height as the recess B. The film 5 still remains on the recess B. When the polishing step is finished, a PSG film layer 2 is exposed on the projection A, the film 5 is already removed on the recess B, and the aluminum layer is polished thereunder so that the projection A and the recess B becomes substantially the same height.
申请公布号 JPS62114242(A) 申请公布日期 1987.05.26
申请号 JP19850255429 申请日期 1985.11.14
申请人 FUJITSU LTD 发明人 MIYAJIMA MOTOMORI;KAWAGUCHI KAZUYUKI
分类号 H01L21/3205;H01L21/304;H01L23/52 主分类号 H01L21/3205
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