| 摘要 |
PURPOSE:To improve a quantum light efficiency by forming a laminated structure in the manner that a polycrystalline Si layer reduced in thickness in an electrode structure and a transparent electrode superposed on the Si layer are laminated one upon another. CONSTITUTION:A gate oxide film (silicon oxide film) 2 as an insulating layer and a gate electrode 3 are sequentially formed on a conductivity type semiconductor substrate (silicon) 1 as a MOS gate structure. A polycrystalline Si gate layer 3a reduced in thickness and thickness and a transparent electrode 3b superposed on the layer 3a are laminated in a double structure as the gate electrode 3. The layer 3a is reduced in boundary level density, and the electrode 3b is acted to reduce wiring resistance, thereby improving its quantum light efficiency.
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