发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 PURPOSE:To prevent the malfunction of an unselected word line at the time of active pull-up operation and to reduce the peak load of current consumption by operating the active pull-up circuits of a pair of bit lines divided into plural blocks that intersect the same word line successively at every time interval. CONSTITUTION:A pair of bit lines that intersect the same word lines WL1, WL0 are divided into two groups of blocks of bit line BL0 and inversion BL0, BL2 and inversion BL2..., BL1 and inversion BL1, BL3 and inversion BL3... etc. Corresponding active pull-up circuits AR0, AR2..., AR1, AR3..., etc., of the pair of bit lines of blocks of bisection, etc., are operated successively by clocks phiR0, phiR1. By this divided operation, the wave height of coupling noise of positive direction received from bit lines intersected by unselected word lines is made small, and it is not necessary to make the degree of conduction of a transistor that forms a leak bus of word lines WL0, WL1 too large, and the malfunction of unselected word lines can be prevented. Further, the peak load of current consumption can be lowered.
申请公布号 JPS62114194(A) 申请公布日期 1987.05.25
申请号 JP19850257086 申请日期 1985.11.13
申请人 MITSUBISHI ELECTRIC CORP 发明人 HIDAKA HIDETO
分类号 G11C11/401;G11C11/34;G11C11/409 主分类号 G11C11/401
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