| 摘要 |
PURPOSE:To easily provide a micro contact hole, equipped with a desired diameter and with an excellent coverage, by a method wherein a second process of forming an insulating film is accomplished between a first process of photoetching and third process of anisotropic dry etching. CONSTITUTION:A photoresist 3 is applied to a field insulating film 2 formed on a silicon substrate 1. An indicating beam L is thereon with the intermediary of a mask 4 for the formation on the field insulating film 2 of an opening 6 with its size dependent upon a mask pattern diameter 5. A process follows of attaching a silicon oxide insulating film 7 to the field insulating film 2 and opening 6. After the removal of the silicon oxide insulating film 7 by the anisotropic dry etching method, there remains an insulating film 8 on the side wall of the opening 6 with its thickness approximating that of the silicon oxide insulating film 7. This realizes a contact hole with its diameter far smaller than that of the opening 6 formed under exposure.
|
