| 摘要 |
PURPOSE:To prevent the outflow of charges from a reverse conduction type region, and to prevent electrical leakage and the abnormality of an output by completely coating one conduction type region and the reverse conduction type region and an upper section in the vicinity of a junction section on the surface of a substrate with one conduction type region with a conductive film electrically connected to one conduction type region. CONSTITUTION:A conductive film 3 electrically connected to one conduction region is formed to a reverse conduction type region shaped into one conduction type region and the upper section of a region in the vicinity of a junction section on the surface of a semiconductor with one conduction type region, and the reverse conduction type region is coated completely with the conductive film 3. The charge-up phenomenon of the charging of the upper section of a protective oxide film 7 according to the constitution has not an effect even on the lower section of the conductive film 3 because the reverse conduction type region is shielded completely by the conductive film 3 electrically connected to one conduction type region. Consequently, potential under a thick oxide film 5 does not rise, thus preventing an electrical leakage phenomenon and the abnormality of an output.
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