发明名称 SEMICONDUCTOR STORAGE DEVICE
摘要 PURPOSE:To heighten word line potential by simple constitution and to prevent rising up of word line potential in non-selection side by inactivating a word line malfunction preventing means after starting active pull-up period. CONSTITUTION:When active pull-up period in which a bit line BL of H side or inverse BL is boosted is started, and a clock approx.=R' rises up, a transistor QQ' is made on and a control signal RQ' becomes L. Transistors Q01, Q11 of a word line malfunction preventing means that prevents rising up by grounding word lines WL0, WL1 which are not selected at the time of word line selection by a low address decoder 1 are made off, and the word line malfunction preventing means is inactivated. Accordinly, selected word line potential can be kept high without causing current leakage, and rising up of unselected work line potential can be prevented, and malfunction due to rising up does not occur.
申请公布号 JPS62114191(A) 申请公布日期 1987.05.25
申请号 JP19850257084 申请日期 1985.11.13
申请人 MITSUBISHI ELECTRIC CORP 发明人 HIDAKA HIDETO;FUJISHIMA KAZUYASU;KUMANOTANI MASAKI;MIYATAKE HIDEJI;DOSAKA KATSUMI;KONISHI YASUHIRO
分类号 G11C11/407;G11C11/34 主分类号 G11C11/407
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