| 摘要 |
PURPOSE:To form an opening section in small size, and to laminate and shape wiring layers flatly by removing a laminated metal material except a metal buried layer through dry etching by utilizing a coating mask. CONSTITUTION:An insulating film 2 with an opening section 2a and a resist mask 3 are formed onto a semiconductor substrate 1 in succession. A metallic layer 4 is shaped onto the resist mask 3 and a metal buried layer 4a into the opening section respectively. A coating material layer 5 is formed onto these layers. The coating material layer 5 on the metallic layer 4 is removed, and a coating mask 5a is shaped while the metallic layer 4 is taken away. The exposed resist mask 3 and the coating mask 5a on said metal buried layer 4a are gotten rid of. A wiring layer 6 connected to the semiconductor substrate 1 is formed onto the metal buried layer 4a. Accordingly, the surface is flattened, and a fine opening section for a contact is obtained.
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