| 摘要 |
PURPOSE:To prevent Si precipitation by a method wherein a barrier metal is deposited so that it may provide an excellent coverage for Si precipitation prevention and subjected to anisotropic etching as the result of which the barrier metal is retained only on the side wall of an opening. CONSTITUTION:A BPSG film 2 is formed on the entire surface of a substrate 1. The BPSG film 2 is subjected to etching that is accomplished against a desired position for the formation of an opening. Next, on the BPSG film 2, a barrier metal 3 is deposited, which is followed by anisotropic etching. With the barrier metal 3 deposited on the entire surface providing an excellent coverage, the anisotropic etching may affect the barrier metal 3 uniformly from above, as the result of which the barrier metal layer 3 is retained only on the side wall of the BPSG film 2. The barrier metal 3 thus retained contributes to preventing Si precipitation in the contact hole region. Finally, an AlSi layer 4 is formed for the completion of wiring.
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