发明名称 CHARGE TRANSFER DEVICE
摘要 PURPOSE:To set a dynamic range within an optimum range, and to improve a signal-to-noise ratio when the quantity of charges to be transferred are little by transferring charges, selecting the unit number of a charge transfer element in response to the quantity of charges stored in a charge storage region. CONSTITUTION:The plural units of charge transfer devices are disposed to one charge storage region 30 through the combination of transfer gates 4a1, 4a2 operating mutually independently and CCD units 5a1, 5a2. Unit number transferring the charges of the charge transfer devices is selected in response to the quantity of charges stored in the charge storage region 3a. A semiconductor material having an energy band gap fitted for an aimed wavelength zone is used as photoelectric conversion elements 1a, 1b... arranged in each picture element region. Accordingly, the dynamic range of the device can be set within an optimum range, and fixed-pattern noises are detected as outputs corresponding to units inputting no charge when the quantity of charges to be transferred is small, thus improving a signal-to-noise ratio by correction arithmetic operation.
申请公布号 JPS62113472(A) 申请公布日期 1987.05.25
申请号 JP19850254013 申请日期 1985.11.13
申请人 FUJITSU LTD 发明人 YAMAMOTO TOSHIRO;ITO YUICHIRO
分类号 H01L29/762;H01L21/339;H01L27/14;H01L27/148;H01L29/76;H01L29/772;H04N5/335;H04N5/341;H04N5/355;H04N5/365;H04N5/372;H04N5/374 主分类号 H01L29/762
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