发明名称 PHOTOMASK FOR PHOTOETCHING
摘要 PURPOSE:To make a material of a transfer pattern usable as the transfer pattern material even if said material is brittle and has poor adhesiveness to a mask substrate by tightly adhering a mask protective material to cover the transfer pattern on the transfer pattern side of a photomask for photoetching. CONSTITUTION:This photomask is constructed to have the mask substrate 1 consisting of a material to allow transmission of incident light, the transfer pattern 2 consisting of the material which does not allow the transmission of the incident light and the mask protective film 3 consisting of the material to allow the transmission of the incident light. The incident light 4 passes the parts except the transfer pattern 2 and enters the mask protective film 3. Since the mask protective film 3 is made of the material to allow the transmission of the incident light, the incident light transmits said film as it is to form transmitted light 5. Selective exposure is, therefore, made possible and even if the material of the transfer pattern 2 is soft, there is the mask protective film 3 and therefore, the the transfer pattern is protected against flawing; in addition, even if the material of the transfer pattern 2 has the poor adhesiveness to the mask substrate 1, the mask protective film 3 is a holding body and consequently such poor adhesiveness is of no problem.
申请公布号 JPS62113146(A) 申请公布日期 1987.05.25
申请号 JP19850253944 申请日期 1985.11.12
申请人 NEC CORP 发明人 MORI KUNIO
分类号 G03F1/00;G03F1/48;H01L21/027 主分类号 G03F1/00
代理机构 代理人
主权项
地址