| 摘要 |
PURPOSE:To improve the corrosion resistance and recording density of an element by using a transparent dielectric film formed of aluminum nitride silicon having different refractive indices to coat a rare earth transition metal alloy film thereby increasing the refractive index of the dielectric film on a substrate side. CONSTITUTION:The transparent aluminum nitride silicon film 2 which is the transparent dielectric film is formed on the transparent substrate 1 and the rare earth transition metal alloy film 3 is formed on the film 2. The transparent aluminum nitride silicon film 4 which is the transparent dielectric film is formed on the film 3 and a reflecting film 5 is formed on the film 4. The aluminum nitride silicon film 2 is formed to the refractive index larger than the refractive index of the aluminum nitride silicon film 3. The magnetooptic memory element having the improved corrosion resistance and recording density is thus obtd.
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