| 摘要 |
PURPOSE:To form shallow P<+> junction layers by a method wherein an Si substrate is doped with B to form P-type diffused layers; next a metallic nitride film is formed on the surface of substrate to be heat-treated for reducing the depth of diffused layer; and finally the metallic nitride film is removed. CONSTITUTION:Field insulation films 12 are formed on an N-type Si substrate 11 and then a gas electrode comprising phosphor doped polycrystalline Si film is formed through the intermediary of a gate oxide film 13. P<+> type source.drain regions 15 are formed by B ion implantation for heat-treatment at the temperature >=900 deg.C. First, when a TiN film 16 is formed on overall surface to be heat-treated in N2 atmosphere, B ion is diffused in TiN to produce a state 17 wherein B is diffused shallowly making B coexist both in the Si substrate 11 and the TiN. Second, when the TiN film 16 is removed by etching process, a P<+> diffused layers 18 with shallow junction depth are formed. Finally overall surface of substrate is covered with passivation insulating films 19 so that contact holes may be made to provided necessary Al interconnection 20 for producing MOSTr.
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