| 摘要 |
PURPOSE:To cut down the gas substitution time; to prevent a wafer slip from occuring; and to reduce any pattern shift and flake by a method wherein nozzles are dual structured so that reactive gas may be jetted from outer nozzle to be routed sideways on the surface of a wafer while purge gas may be jetted from inner nozzle to be routed upward along the ceiling of inner bell jar. CONSTITUTION:Substitution gas is led-in from inlet ports 22, 23 simultaneously to be jetted into a reaction chamber 1 from nozzles 16, 17 for gas substitution. During the epitaxial filming process, reaction gas led-in from the inlet port 22 is discharged into the reaction chamber 1 from the nozzle 16 through an inlet pipe 20 and a chuck 18. Simultaneously, main purge gas (a) led-in from the other inlet port 23 is discharged into the reaction chamber 1 from another nozzle 17 through another inlet pipe 21 and another chuck 19. The reactive gas with less flow rate flows along the surface of susceptors to be exhausted from exhaust port 25. Likewise the surface gas flowing along the inner wall of quartz-made inner bell jar 2 is exhausted from the exhaust port 25.
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