| 摘要 |
PURPOSE:To facilitate the measurement of a high output laser power, by controlling the incident time of a laser light to be measured which is projected into sensor through a semiconductor substrate by measuring and controlling laser light irradiating the semiconductor substrate while inhibiting the rise in the temperature of the sensor. CONSTITUTION:A semiconductor substrate 6 is set slantly in the optical path of a laser 2 to be measured. The substrate 6 transmits a laser light 2 and absorbs a measuring control laser light 7 to generates free electron in that place, while providing a property of reflecting the laser light 2. The laser light 7 is made to irradiate the position which is irradiated with the laser light 2 and the time when the laser light 2 is incident into a sensor 8 via the substrate 6 is controlled by regulating the irradiation time of the laser light 7. As to the laser light 2 to be incident into the sensor 8, the irradiation time is limited to a shorter time according to energy thereof and hence, the rise in the temperature of the sensor 8 is held back. Thus, the high output laser power can be measured easily. |
