发明名称 ION PLATING APPARATUS
摘要 PURPOSE:To contrive quality improvement of a film formed on a base plate by providing movably an evaporation source via a communication path provided between a vapor deposition chamber and an introducing chamber for a material. CONSTITUTION:An evaporation source 27 is transferred to a vapor deposition chamber 23 side via a communication path 26 by which the vapor deposition chamber 23 capable of being held in vacuum and an introducing chamber 24 for a material are connected and ion plating operation is performed. In such a case that the remaining vapor deposition material 3 of the above-mentioned evaporation source 27 is made less and the material 3 is replenished, the evaporation source 27 is once transferred to the introducing chamber 24 side for a material and a fresh material 13 is introduced from an introducing apparatus 25 for a material. An outgased gas evaporated when the vapor deposition material 3 is heated and melted is discharged through an exhaust hole 29 and the diffused impure substances are not reached to a base plate 25 which is a thin film-forming object provided to the vapor deposition chamber 23 side.
申请公布号 JPS62112776(A) 申请公布日期 1987.05.23
申请号 JP19850253181 申请日期 1985.11.12
申请人 ISHIKAWAJIMA HARIMA HEAVY IND CO LTD 发明人 OKABE SHUICHI
分类号 C23C14/32;C23C14/56 主分类号 C23C14/32
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